High Pressure Crystallization of III-V Nitrides
S. Porowski
High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
Full Text PDF
Crystal growth from the solution under high N2 pressure (HNP method) results in high quality mm size crystals of GaN in 5 to 24 hour process. The crystallization of AlN is less efficient due to relatively lower solubility of nitrogen in the liquid Al. Possibility of InN growth is strongly limited since this compound is unstable at T > 600°C even at 20 kbar. The growth of cm size high quality GaN crystals requires lower supersaturations and longer processes.
DOI: 10.12693/APhysPolA.87.295
PACS numbers: 81.10.-h