Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure
S.A. Vitusevich, T. Figielski, A. Mąkosa, T. Wosiński
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

A.E. Belyaev, R.V. Konakova
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine

and L.N. Kravchenko
Science and Research Institute of Molecular Electronics, 103460 Moscov, Russia
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For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage char­acteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.
DOI: 10.12693/APhysPolA.87.377
PACS numbers: 73.40.Gk, 85.30.Mn