Gain Studies on Photoconductors Made on Partly Compensated GaAs
F. Riesz
Research Institute for Technical Physics of the Hungarian Academy of Sciences, P. 0. Box 76, 1325 Budapest, Hungary
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The gain behavior of GaAs photoconductors realized on the partly com­pensated channel of a MESFET is studied. The gain versus light power de­pendence hints at the domination of the bimolecular recombination and the trap-mediated gain, and only a minor role of the surface photovoltaic ef­fect. The possible correlation between dark current and gain mechanism is pointed out.
DOI: 10.12693/APhysPolA.87.373
PACS numbers: 73.50.Pz, 85.60.Gz