Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface
T. Wosiński, A. Mąkosa
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and J. Raczyńska
Institute of Technical Physics, Military University of Technology, Kaliskiego 2, 01-489 Warszawa, Poland
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Lattice-mismatch-induced defects were studied by means of deep-level transient spectroscopy in high-purity GaAs1-xSbx layers (x = O to 3%) grown by liquid phase epitaxy on GaAs substrates. Microscopic nature and formation mechanism of two electron traps and two hole traps, which ap­peared in the layers as a result of Sb incorporation into the crystal lattice, are briefly discussed.
DOI: 10.12693/APhysPolA.87.369
PACS numbers: 73.20.Hb, 61.72.Lk, 71.55.Eq