Influence of Coimplantation on Activation of Er Emission in Si
H. Przybylińska
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

G. Hendorfer, W. Jantsch and L. Palmetshofer
Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria
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The results of high resolution photoluminescence studies of erbium im­planted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.
DOI: 10.12693/APhysPolA.87.365
PACS numbers: 78.55.Hx, 61.72.Tt