Influence of Coimplantation on Activation of Er Emission in Si |
| H. Przybylińska Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland G. Hendorfer, W. Jantsch and L. Palmetshofer Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria |
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| The results of high resolution photoluminescence studies of erbium implanted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone. |
| DOI: 10.12693/APhysPolA.87.365 PACS numbers: 78.55.Hx, 61.72.Tt |