Effect of Accumulation Layer on Tunneling in ZnSe-ZnTe Double Barrier Heterostructures
P. Bała, R. Ryszewski, W. Bała
Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
Full Text PDF
The tunneling probability in double barrier heterostructures can be af­fected by various effects. One of the most significant is presence of the ac­cumulation layer placed before the structure. The presented time-dependent results show that charge trapped in the accumulation region oscillates in the triangular quantum well and tunnels sequentially through the double barrier structure resulting in periodical changes of the charge density right to the heterostructure.
DOI: 10.12693/APhysPolA.87.341
PACS numbers: 03.65.-w, 73.40.Gk