Some New Aspects of Porous Silicon |

G. Fishman and R. RomestainLaboratoire de Spectrométrie Physique, Université Joseph Fourier-Grenoble I, and C.N.R.S., B.P.87, 38402 Saint Martin d'Hères Cedex, France |

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We recall the geometry of porous silicon and the order of magnitude of some characteristic parameters. We give a brief review of optical experiments and their different interpretations. We focus on quantitative interpretations and show that an essential concept is confinement in a quantum wire or box. In particular, the exchange energy of electron-hole pairs correlated by Coulomb interaction inside a quantum box explains results obtained between 4 I{ and room temperature. Nevertheless, the large shift of the main luminescence line for similar porous silicon but different electrolytes cannot be explained by quantum confinement alone and has to be accounted for by the difference between the dielectric constants inside and outside the porous silicon. A brief account of electroluminescence experiments is also given. |

DOI: 10.12693/APhysPolA.87.285 PACS numbers: 78.50.Ge, 78.55.Hx, 78.60.Fi |