Damage Production in As Implanted GaAs1-xPx |
| J. Krynicki, S. Warchoł, H. Rzewuski Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland and R. Groetzschel FZR Forschungszentrum Rossendorf, Rossendorf/Dresden, Germany |
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| Post-implantation damage in GaAs1-xPx compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 1013 -8 × 1013 cm-2 at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He+ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures. |
| DOI: 10.12693/APhysPolA.87.249 PACS numbers: 61.80.Jh |