On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers |
| L. Dobaczewskia, D.K. Maudeb, M. Missousc and J.C. Portalb aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland bSNCI CNRS, BP166, 38042 Grenoble Cedex 9, France cDepartment of Electrical Engineering and Electronics, UMIST, P.O. Box 88, Manchester M60 1QD, Great Britain |
| Full Text PDF |
| Electronic transport phenomena in molecular beam epitaxy grown silicon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investigated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifestation of the DX centres was demonstrated. |
| DOI: 10.12693/APhysPolA.87.201 PACS numbers: 71.25.Hc, 71.55.Eq, 73.20.Dx |