Correlation between Magnetic and Electronic Properties of Sn1-xGdxTe

and A. Łusakowski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

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Magnetic susceptibility, electron paramagnetic resonance and transport properties of Sn1-xGdxTe with 0.04 < x < 0.07 and hole concentrations in the range from 0.7 × 1020 to 16 × 1020 cm-3 were investigated. After annealing of the Sn1-xGdxTe samples with x < 0.05 in Sn vapor their hole concentration decreased from 5 × 1020 cm-3 to about 3 × 1020 cm-3 and their paramagnetic Curie temperature increased a few times. In samples with x > 0.05 no significant change in the magnetic properties was observed after annealing, even at lower hole concentrations. The results can be explained by assuming that an indirect exchange interaction, 4f-5d-band electrons, is responsible for the coupling among Gd ions.

DOI: 10.12693/APhysPolA.87.197 PACS numbers: 75.20.Ck, 75.30.Et