Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
M. Altarelli
European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France
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A brief review of the main experimental techniques exploiting syn­chrotron radiation in semiconductor physics is attempted. Topics empha­sized include the study of surface and interface phenomena, such as sur­face structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many ex­perimental techniques applicable to research in semiconductor physics. Ex­amples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
DOI: 10.12693/APhysPolA.87.17
PACS numbers: 68.35.Bs, 68.55.-a, 78.70.Ck