Luminescence of ZnxMg1-xSe Layers Obtained by Thermal Diffusion of Mg into ZnSe and ZnxMg1-xSe Epilayers Grown by Molecular Beam Epitaxy
W. Bała, F. Firszt, G. Głowacki, A. Gapiński and J. Dzik
Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
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This work deals with the study of photoluminescence properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on (001) GaAs and (111) ZnTe substrates and ZnxMg1-xSe layers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of ZnxMg1-xSe layers are dominated by blue and violet emission bands with maxima positioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2.81 eV and 2.705 eV, depending on preparation conditions. In some samples the blue luminescence is observed up to room temperature.
DOI: 10.12693/APhysPolA.87.161
PACS numbers: 78.55.Et, 78.20.Ci, 78.66.Hf