Orientation of Metastable EL2 under Uniaxial Stress |
| A. Babiński and A. Wysmołek Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland |
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| Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]-/0) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]-/0 are found to be equal to -17 meV/GPa and -41 meV/GPa. |
| DOI: 10.12693/APhysPolA.87.137 PACS numbers: 71.55.Eq, 72.20.Fr, 72.80.Ey |