X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching |
| R.J. Iwanowskia, J.W. Sobczakb and B.J. Kowalskia aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland bInstitute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warszawa, Poland |
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| Complementary X-ray photoelectron spectroscopy and optical reflectivity studies of crystalline Si(111) surfaces prepared by two different wet chemical etching processes were performed. These included aqueous HF solution etch or diluted CP-4 bath. Optical reflectivity spectra of Si surfaces, measured in the range 3.7-11 eV, were found strongly dependent on the applied etching process. Analysis of the core level X-ray photoelectron spectroscopy data has shown similarity of the surface structure, irrespectively of the etching procedure. Finally, comparison of optical reflectivity and valence band X-ray photoelectron spectra revealed a qualitative correlation between them indicating dominant influence of the bulk (here, the subsurface region containing polishing-induced defects) in the case studied. This paper is the first one which presents correlations between optical reflectivity and X-ray photoelectron spectroscopy data for Si and thus illustrates a bulk sensitivity of both techniques considered. |
| DOI: 10.12693/APhysPolA.86.825 PACS numbers: 78.40.Fy, 79.60.Bm |