Structure Perfection Study of Crystals Containing Micro- and Macrodistortions by X-Ray Acoustic Method
V.I. Khrupa, D.O. Grigoryev and A.Ya. Dzyublik
Institute of Semiconductor Physics, National Academy of Sciences, Prospekt Nauki 45, 252028 Kiev-28, Ukraine
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The X-ray acoustic method for determination the structure perfection integral characteristics is suggested for slightly imperfect dislocation-free crystals. The method is suitable for investigation of a crystal disturbed both by localized (microdefects) and by distributed (macrostrains) structure defects. It is based on the analysis of dependence of the distance Δx between two minima, arising in the spatial intensity profile I(x) of the X-ray beam diffracted by acoustically excited crystal, upon ultrasound frequency vs. Using the data Δx(vs) for two selected reflections, we calculated the values of the extinction lengths Λ which enabled us to identify the predominate type of structure disturbances as well as to estimate the static Debye-Waller factors e-L and the period of the main macrodeformation λM for a sample containing simultaneously microdefects and periodic long range deformations. Such approach was used for studying the structure perfection of Czochralski-grown (Cz) and float-zone (FZ) silicon crystals.
DOI: 10.12693/APhysPolA.86.597
PACS numbers: 81.40.-z, 61.72.Dd