Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

L.I. Datsenkoa, A. Misiukb, J. Härtwigc, A. Briginetsa and V.I. Khrupaa aInstitute of Semiconductor Physics, National Academy of Sciences, Prosp. Nauki 45, 252028 Kiev-28, Ukraine bInstitute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland cExperiments Division of ESRF, BP 220, 38043 Grenoble Cedex, France

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The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.

DOI: 10.12693/APhysPolA.86.585 PACS numbers: 61.70.-r, 81.40.-z