Ohmic Contacts to GaAs: Fundamentals and Practice
A. Piotrowska
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
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Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The paper emphasizes the reactions at the metal/GaAs interface and the structural factors which govern its electrical behavior and long-term stability. Results on the optimization of conventional gold-based ohmic contacts together with recent achievements in the technology of non-alloyed contacts are overviewed.
DOI: 10.12693/APhysPolA.84.491
PACS numbers: 73.40.Ns