High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

G. Bauer, E. Koppensteiner, P. Hamberger Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria J. Nützel, G. Abstreiter Walter Schottky Institut, TU München, D-8046 Garching, Germany H. Kibbel, H. Presting and E. Kasper Daimler Benz AG, Forschungszentrum, Wilhelm Runge Straße 11, D-7900 Ulm, Germany

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Double crystal and triple axis X-ray diffractometry was used to characterize the structural properties of Si/Si1-xGex multiquantum well samples grown pseudomorphically on Si(001) substrates, as well as of short-period Si9Ge6 superlattices grown by molecular beam epitaxy on rather thick step-graded Si1-xGex (0 < x < 0.4, 650 nm thick) buffers followed by 550 nm Si0.6 Ge0.4 layers. Reciprocal space maps around the (004) and (224) reciprocal lattice points yield direct information on the strain status of the layers in the heterostructure systems and in particular on the amount of strain relaxation.

DOI: 10.12693/APhysPolA.84.475 PACS numbers: 68.65.+g, 61.10.-i, 68.55.Jk