Antisites Defects in GaP |
| J. Jasiński, M. Kamińska Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland M. Palczewska and P. Jurkiewicz-Wagner Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland |
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| ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP4 or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals. |
| DOI: 10.12693/APhysPolA.84.579 PACS numbers: 71.55.Eq, 78.50.Ge, 76.30.Mi |