Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon
P. Kaczor, M. Godlewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and T. Gregorkiewicz
Van der Waals-Zeeman Laboratorium, University of Amsterdam, Vackelnierstraat 65, 1018 XE Amsterdam, The Netherlands
Full Text PDF
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
DOI: 10.12693/APhysPolA.84.555
PACS numbers: 71.55.Ht, 78.50.Ge