Interaction between Thin Films of Zinc and (100) GaAs |
| E. Kamińska, A. Piotrowska, R. Żarecka Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland and E. Mizera Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn3As2 phase, highly oriented with respect to the (100) substrate takes place. |
| DOI: 10.12693/APhysPolA.84.527 PACS numbers: 73.40.Ns |