Changes of GaP: N Defect Structure under Hydrostatic Pressure |
| J. Bąk-Misiuk, J. Domagała, B. Kozankiewicz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland A. Misiuk, J. Adamczewska Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland and M. Skibska High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland |
| Dedicated to Professor Dr. Julian Auleytner on the occasion of his 70th birthday |
| Received: September 10, 1992 |
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| The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, cN, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with cN > 1020 at. cm-3. The model explaining the hydrostatic pressure induced defect structure changes is proposed. |
| DOI: 10.12693/APhysPolA.83.87 PACS numbers: 65.70.+y |