Implantation of Rare-Earth Atoms into Si and III-V Compounds
A. Kozanecki, J.M. Langer
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and A.R. Peaker
University of Manchester Institute of Science and Technology, P.O. Box 88, Sackville Str., Manchester, M60 1QD, United Kingdom
Dedicated to Professor Dr. Julian Auleytner on the occasion of his 70th birthday
Received: November 20, 1992
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Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
DOI: 10.12693/APhysPolA.83.59
PACS numbers: 61.80.Jh, 78.55.-m