Implantation of Rare-Earth Atoms into Si and III-V Compounds |
| A. Kozanecki, J.M. Langer Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland and A.R. Peaker University of Manchester Institute of Science and Technology, P.O. Box 88, Sackville Str., Manchester, M60 1QD, United Kingdom |
| Dedicated to Professor Dr. Julian Auleytner on the occasion of his 70th birthday |
| Received: November 20, 1992 |
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| Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported. |
| DOI: 10.12693/APhysPolA.83.59 PACS numbers: 61.80.Jh, 78.55.-m |