Acoustoelectrical Relaxation in GaAs by the Formation and the Recovery of Metastable EL2 |
| J. Ertel, H.G. Brion and P. Haasen Institut für Metallphysik, Universität Göttingen, Hospitalstr. 3-7, W-3400, Göttingen, Germany |
| Dedicated to Professor Dr. Julian Auleytner on the occasion of his 70th birthday |
| Received: August 24, 1992 |
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| The transformations between the normal and metastable state of EL2 in GaAs are investigated. We apply the internal friction technique as a probe for very small conductivities and discuss the changes in conductivity by the formation and recovery of EL2*. At 40 K both shallow acceptors and EL2 are photoquenched into neutral metastable states. The acceptors are likely to be associated with EL2* forming an electrically inactive state. We identify two damping peaks at 60 and 95 K with the regeneration of the acceptors and EL2 respectively. The latter indicates a regeneration via the charged defect (EL2)+. |
| DOI: 10.12693/APhysPolA.83.11 PACS numbers: 62.40.+i, 77.40.+i, 72.80.Ey, 71.55.Eq |