Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
R. Dwilińskia, M. Palczewskab, P. Kaczorc, K. Koronaa, A. Wysmołeka, R. Bożeka and M. Kamińskaa
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
cInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
DOI: 10.12693/APhysPolA.82.613
PACS numbers: 71.55.-i, 78.50.Ge, 76.30.Mi