Hydrogen Passivation in Semiconductors
M. Stavola
Physics Department and the Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015, USA
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A survey is presented of the structure, stability, and reorientation kinetics of acceptor-H and donor-H complexes in Si and III-V semiconductors. A few examples of the unintentional introduction of H into device materials are also discussed.
DOI: 10.12693/APhysPolA.82.585
PACS numbers: 61.70.-r, 61.70.Tm