Ground Shallow Donor State of III-V Compounds for Arbitrary Magnetic Field
A. Obuchowicz and J. Własak
Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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Theory of shallow donor in III-V semiconductors in the presence of magnetic field is reinvestigated. Considerations are performed within the 3-level Kane model. In order to avoid singularities caused by the Coulomb potential we divide it into short- and long-range components. The latter one is the slowly varying potential and contrary to the Coulomb potential it satisfies all demands for envelope function equation. The short-range part is contributing to a chemical shift. Calculation of energies of two possible spin states of ground donor level are then performed using variational method.
DOI: 10.12693/APhysPolA.82.693
PACS numbers: 78.20.Ls, 61.50.Em, 71.55.-i