On Trap Generation in SiO2 Films of Si MOSFETS by Hot Electrons
I. Strzałkowski, M. Marczewski, M. Kowalski, C. Jastrzębski
Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

and A. Bąkowski
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
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Trap generation in amorphous SiO2 films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 1019 e/cm-2 and injected current density in the range 2-300 μA/cm2 were determined and discussed.
DOI: 10.12693/APhysPolA.82.685
PACS numbers: 72.20.Jv, 73.40.Qv, 73.60.Hy