Improvement of Electrical Properties of Hg1-xZnxSe upon Doping with Fe
W. Dobrowolski, E. Grodzicka, J. Kossut and B. Witkowska
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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Results of measurements of electron concentration and mobility in mixed crystals of Hg1-xZnxSe (0 ≤ x ≤ 0.07) doped with resonant Fe donors (0 ≤ nFe ≤ 5 × 1019 cm-3) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.
DOI: 10.12693/APhysPolA.82.681
PACS numbers: 72.80.Ey, 72.20.Fr, 71.55.Fr