Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon
P. Kaczor, K. Kopalko, M. Godlewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and T. Gregorkiewicz
Van der Waals-Zeeman Laboratorium, University of Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
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A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
DOI: 10.12693/APhysPolA.82.677
PACS numbers: 71.55.Ht, 78.50.Ge