III-V Semiconducting Nitrides Energy Gap under Pressure
P. Perlin, I. Gorczyca, H. Teisseyre, T. Suski, E. Litwin-Staszewska, S. Porowski, I. Grzegory
High Pressure Research Center "Unipress", SokoĊ‚owska 29/37, 01-142 Warszawa, Poland

and N.E. Christensen
Institute of Physics, Aarhus University, 8000 Aarhus, Denmark
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In this paper we present overview of our recent experimental and theoretical results concerning electronic band structure of III-V nitrides under pressure. It is shown here that the pressure coefficients of the direct gap for studied nitrides are surprisingly small. To describe tendency in changes of the gap with pressure we use a simple empirical relation.
DOI: 10.12693/APhysPolA.82.674
PACS numbers: 71.25.Tn