Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending
G. Ambrazevičius, S. Marcinkevičius, T. Lideikis and K. Naudžius
Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
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Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.
DOI: 10.12693/APhysPolA.82.660
PACS numbers: 72.80.Ey, 73.50.Gr