Optical Bistability Due to Photo-Induced Charge Transfer in a Type-II GaAs/AlAs Quantum Well
R. Teissier, R. Planel and F. Mollot
Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France
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We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure. Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers. The transition occurs with the alignment of electronic Γ and X states due to optical pumping, and no external voltage bias is needed.
DOI: 10.12693/APhysPolA.82.656
PACS numbers: 78.55.Cr, 42.65.Pc, 72.20.Jv