Hot Carrier Effects in Optically Detected Cyclotron Resonance Studies of III-V Semiconductors
K. Karpińska, S. Dedulewicz and M. Godlewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
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The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, are discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.
DOI: 10.12693/APhysPolA.82.623
PACS numbers: 71.35.+z, 72.70.+m, 76.90.+d