Surface Electronooptical Effects Connected with Gallium Doping of Cd0.85Mn0.15Te |
| S. Kuźmiński, K. Pater and A.T. Szaynok Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland |
| Received: May 24, 1991; in revised form July 15, 1991 |
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| Surface photovoltage measurements performed for the Cd0.85Mn0.15Te single crystal samples intrinsic and gallium doped have shown influence of gallium doping on height and sign of the surface voltage barrier. From results of the surface photovoltage spectroscopy (SPS) measurements thevalues of acceptor, donor and manganese states energies have been determined. The photoconductivity (PC) measurements confirmed the effects found on the SPS curves. |
| DOI: 10.12693/APhysPolA.81.309 PACS numbers: 73.20.-r, 73.20.At |