Analysis of Charge Versus the Surface Fermi Level Position at Silicon Surface |
| B. Adamowicz Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland |
| Received: May 21, 1991; in revised form July 15, 1991 |
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| The surface charge Qsc versus the surface Fermi level position Φs for real (111) surfaces of p- and n-type Si has been studied. The values of Qsc have been obtained on the basis of measurements of the surface potential Vs by means of the surface photo voltage method. The complementary character of Qsc(Φs) dependences for the surfaces of p- and n-type Si supports the fact that the surface state distribution is not dependent on the type of bulk doping but on the surface preparation process. |
| DOI: 10.12693/APhysPolA.81.303 PACS numbers: 73.20.-r |