X-ray Standing Wave Studies of Si (111) Crystal Implanted by Fe and Ni Ions
I.A. Vartanjantz, M.V. Kovalchuk, A.N. Sosphenov
Institute of Crystallography, Academy of Sciences of USSR, 117333, Moscow, Leninsky Prospect 59, USSR

J. Auleytner and J. Majewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
Received: August 8, 1991; in final form: November 8, 1991
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The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two layer model was used. The analysis revealed that after annealing only a slight amount (~20÷30%) of the implanted atoms occupy the position of the Si crystal planes. The Rutherford backscattering (RBS) experiment that confirms the results obtained by the XRSW method was performed.
DOI: 10.12693/APhysPolA.80.811
PACS numbers: 61.10.-i, 61.70.Sk