Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering
W. Bala
Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

M. Drozdowski, and M. Kozielski
Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland
Received: March 21, 1991; in final form: July 2, 1991
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Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.
DOI: 10.12693/APhysPolA.80.723
PACS numbers: 78.30.Hv, 61.70.Wp