Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering |
| W. Bala Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland M. Drozdowski, and M. Kozielski Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland |
| Received: March 21, 1991; in final form: July 2, 1991 |
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| Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films. |
| DOI: 10.12693/APhysPolA.80.723 PACS numbers: 78.30.Hv, 61.70.Wp |