Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP |
| A. Piotrowska, E. Kamińska, M. Guziewicz Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland R. Veresegyhazy, I. Mojzes and B. Pecz Research Institute for Technical Physics, Hungarian Academy of Sciences, 1325 Budapest, P.O. Box 76, Hungary |
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| Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior. |
| DOI: 10.12693/APhysPolA.80.457 PACS numbers: 73.40.Ns |