Observation of Two-Dimensional Electron Gas in LPE-Grown GaInAs-InP Heterostructures
K. Fronc, G. Grabecki, J. Wróbel, T. Dietl
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and M. Gajewska
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
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A series of GaInAs/InP heterostructures was grown by liquid phase epitaxy. The heterostructures were characterized by magnetotransport measurements carried out down to 1.8 K and up 10 T. The results demonstrate the existence of the high-mobility two-dimensional electron gas in the narrow-gap GaInAs as well as the presence of residual conductance through the InP buffer layer.
DOI: 10.12693/APhysPolA.80.449
PACS numbers: 68.55.Df, 73.20.Dx, 73.60.Br