FFirst TSC and DLTS Measurements of Low Temperature GaAs |
| J. Muszalski, A. Babiński, K.P. Korona Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland E. Kamińska, A. Piotrowska Institute of Electron Technology, Al. Lotników 32/46, 02-688 Warszawa, Poland M. Kamińska Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland and E.R. Weber University of California, Berkley, CA94720, USA |
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| The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found. |
| DOI: 10.12693/APhysPolA.80.413 PACS numbers: 71.55.-i, 72.80.Ey |