Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
A. Misiuk, J. Adamczewska
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

J. Bąk-Misiuk
Institute of Physics, Polish Academy of Sciences, Warszawa, Poland

J. Härtwig
Department of Physics, Jena University, Jena, Germany

A. Morawski and Z. Witczak
High Pressure Research Centre, Polish Academy of Sciences, Warszawa, Poland
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The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
DOI: 10.12693/APhysPolA.80.317
PACS numbers: 61.70.At, 61.70.-r, 81.40.-z