Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method |
| K. Fronc, A. Mąkosa and T. Wosiński Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Level Transient Spectroscopy (DLTS) characterization of the crystal revealed three deep traps related to native defects. Microscopic origin of the traps is discussed and prospective use of SSD-grown GaAs as a bulk material with the high luminescence efficiency is emphasized. |
| DOI: 10.12693/APhysPolA.80.349 PACS numbers: 61.70.-r, 71.55.Eq |