Pulsed Laser Evaporation and Epitaxy |
| J.J. Dubowski Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada |
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| The application of pulsed lasers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has been the subject of steadily growing interest in the deposition of metals, dielectrics, semiconductors and since 1987, high-Tc superconductors. Laser induced target surface morphology changes, properties of laser induced vapours and pulsed deposition rate associated with the use of a pulsed laser for vacuum epitaxy are discussed. A pulsed laser evaporation and epitaxy (PLEE) system is described and the results of PLEE application for the growth of Cd1-xMnxTe and CdTe-Cd1-xMnxTe quantum well and superlattice structures are reviewed. Feasibility of PLEE in bandgap engineering is also discussed. |
| DOI: 10.12693/APhysPolA.80.221 PACS numbers: 68.55.-a, 78.65.Fa |