Magnetophotoconductivity Due to Intra-Shallow-Donor Transitions in Semi-Insulating GaAs |
| K. Karpierza, M.L. Sadowskib and M. Grynberga a)Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland b)High Pressure Research Centre UNIPRESS, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland |
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| The paper concerns investigations of shallow centres in semi-insulating (SI) GaAs samples. A very sensitive measuring method - magnetophotoconductivity due to intra-shallow-donor transitions - was used. We report the behaviour of intra-impurity transitions as well as an additional structure in low magnetic fields for different far-infrared wavelengths (70.6 μm, 96.5 μm, 118.8 μm, 163 µm). The results are discussed in terms of a fluctuating potential from ionized centres in SI GaAs. The physical mechanism responsible for the low magnetic field structure is proposed. |
| DOI: 10.12693/APhysPolA.80.291 PACS numbers: 72.40.+w, 78.20.Ls, 78.50.-w |