Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers |
Z. Wilamowski Institute of Physics of the Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland W. Jantsch and G. Ostermayer Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz-Auhof, Austria |
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The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron. |
DOI: 10.12693/APhysPolA.80.283 PACS numbers: 72.20.Jv, 71.55.-i |