Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers
Z. Wilamowski
Institute of Physics of the Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

W. Jantsch and G. Ostermayer
Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz-Auhof, Austria
Full Text PDF
The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron.
DOI: 10.12693/APhysPolA.80.283
PACS numbers: 72.20.Jv, 71.55.-i