High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs |
| J.E. Dmochowski Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Al. Lotników 32/46, Poland and Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK P.D. Wang and R.A. Stradling Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK |
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| The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs. |
| DOI: 10.12693/APhysPolA.80.279 PACS numbers: 71.55.Eq, 78.50.Ge |