Impact Ionization Driven Chaotic Photoluminescence Oscillations in Ga0.47In0.53As
M. Godlewski, K. Fronc
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

M. Gajewska
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

W.M. Chen and B. Monemar
Linköping University, Department of Physics and Measurement Technology, 581 83 Linköping, Sweden
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A new application of the Optically Detected Cyclotron Resonance (ODCR) is presented. We report impact ionization studies of bound exciton: (BE) and shallow donor related recombination processes in Ga0.47In0.53As. An appearance of chaotic oscillations in photoluminescence (PL) intensity is observed under condition of impact ionization of deeper donors.
DOI: 10.12693/APhysPolA.80.271
PACS numbers: 71.35.+z, 72.70.+m, 76.90.+d