Determination of Free Exciton Capture Cross Section of Si:Al by Photoluminescence
G. Schramm
VEB Spurenmetalle Freiberg-WlB im VEB Kombinat Mikroelektronik Erfurt, PSF 211, 9200 Freiberg, Germany
Received: April 9, 1990
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The free excitons capture rate and capture cross-section of the neutral Al atom in silicon were determined at 4.2 K. The obtained values are of the same order of magnitude as reported values of other shallow dopants.
DOI: 10.12693/APhysPolA.79.869
PACS numbers: 78.55.-m