Determination of Free Exciton Capture Cross Section of Si:Al by Photoluminescence |
| G. Schramm VEB Spurenmetalle Freiberg-WlB im VEB Kombinat Mikroelektronik Erfurt, PSF 211, 9200 Freiberg, Germany |
| Received: April 9, 1990 |
| Full Text PDF |
| The free excitons capture rate and capture cross-section of the neutral Al atom in silicon were determined at 4.2 K. The obtained values are of the same order of magnitude as reported values of other shallow dopants. |
| DOI: 10.12693/APhysPolA.79.869 PACS numbers: 78.55.-m |