MIS-Microstructure with Periodic Field Electrodes. A New Type of Dynamic Superlattice |
| I.E. Trale Physical and Technical Institute, Academy of Sciences of the Byelorussian SSR, Zhodinskaja St. 4, 220730-Minsk, USSR |
| Received: May 21, 1990 |
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| The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in metal-insulator-semiconductor (MIS) microstructure with periodic field electrodes is considered. If a voltage of some sufficiently high frequency is applied to such a structure the effect of this high frequency field on a charge carriers in semiconductor is equivalent, in a sense, to the effect of some time-independent effective potential which is a sequence of deep "dynamic" quantum wells, where the charge carriers are localized. It is shown that the electron resonant tunneling may occur in this structure. |
| DOI: 10.12693/APhysPolA.79.699 PACS numbers: 73.40.-c |